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BAS40 데이터시트 PDF




Microsemi Corporation에서 제조한 전자 부품 BAS40은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BAS40 기능
기능 SCHOTTKY array SERIES
제조업체 Microsemi Corporation
로고 Microsemi Corporation 로고


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BAS40 데이터시트, 핀배열, 회로
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are
provided for general-purpose use in high-speed switching, mixers and
detector applications. They may also be used for signal terminations at the
board level. This helps maintain signal integrity and counteract the
transmission-line effects with (PC) board traces by clamping over/and
undershoot from signal reflections with the schottky-low-threshold voltages.
This type of termination also does not depend on matching the transmission
line characteristic impedance, making it particularly useful where line
impedance is unknown or a variable. This method of termination can
control distortions of clock, data, address, and control lines as well as
provides a stabilizing effect on signal jitter. It can also significantly reduce
power consumption compared to standard resistor- based termination methods.
BAS40
and
BAS70
SCHOTTKYarray™ SERIES
FEATURES
Protects from line to VCC and line to ground
Clamps within one forward diode threshold voltage
Low forward voltage and reverse recovery
characteristics
Bidirectional-low-forward available with “-04” suffix (Figure 2)
SOT-23 Surface Mount packaging for small foot print
PACKAGING
Tape & Reel EIA Standard 481
7 inch reel 3,000 pieces
13 inch reel 10,000 pieces
MAXIMUM RATINGS
Operating Temperatures: -550C to +1250C
Storage Temperature: -550C to +1500C
Power dissipation at Tamb = 250C is 200 mW
Forward Continuous Current at Tamb = 250C is 200 mA
Surge Forward Current At tp < 1 s, Tamb = 250C is 600 mA
MECHANICAL
Molded SOT-23 Surface Mount
Weight: .008 grams (approximate)
Body Marked with device number
ELECTRICAL CHARACTERISTICS PER DIODE @ 250C Unless otherwise specified
DEVICE
TYPE
Repetitive
Peak Reverse
Voltage
DEVICE
MARKING
FIGURE
VRRM
(VOLTS)
Reverse
Breakdown
Voltage
Tested with
10µA Pulse
V(BR)R
(VOLTS)
Leakage Current
Pulse test
tp < 300µs @
For BAS40
VR = 30 V
Forward Voltage Pulse Test
tp < 300µs
at IF = 1 mA
at IF = 40 mA
For BAS70
VR = 50 V
IR (nA)
VF (mV)
Reverse
Recovery
Time from
IF = 10 mA
through
IR=10mA to
IR=1mA
trr (ns)
Thermal
Resistance
Junction to
Ambient Air
RthJA (K/W)
TYP
MIN
TYP MAX IF=1mA IF=15mA IF=40mA
MAX
MAX
BAS40
43 1
40
40
20 100
380
1000
5
430
BAS40-04
44
2
40
40
20 100
380
1000
5
430
BAS40-05
45
3
40
40
20 100
380
1000
5
430
BAS40-06
46
4
40
40
20 100
380
1000
5
430
BAS70
73 1
70
70
20 100
410 1000
5 430
BAS70-04
74
2
70
70
20 100
410 1000
5 430
BAS70-05
75
3
70
70
20 100
410 1000
5 430
BAS70-06
76
4
70
70
20 100
410 1000
5 430
Capacitance
At VR = 0V
F = 1 MHz
Ctot
pF
MAX
5
5
5
5
2
2
2
2
MSC1380.PDF ISO 9001 CERTIFIED
REV C 2/02/2000





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