BAS70-06 Datasheet PDF - NXP Semiconductors
| Part Number | BAS70-06 | |
| Description | General-purpose Schottky diodes | |
| Manufacturers | NXP Semiconductors | |
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BAS70 series;
1PS7xSB70 series
General-purpose Schottky diodes
Rev. 09 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic
packages.
Table 1. Product overview
Type number
Package
NXP
1PS76SB70
SOD323
1PS79SB70
SOD523
BAS70
SOT23
BAS70H
SOD123F
BAS70L
SOD882
BAS70W
SOT323
BAS70-04
SOT23
BAS70-04W
SOT323
BAS70-05
SOT23
BAS70-05W
SOT323
BAS70-06
SOT23
BAS70-06W
SOT323
BAS70-07
SOT143B
BAS70-07S
SOT363
BAS70-07V
SOT666
BAS70VV
SOT666
BAS70XY
SOT363
JEITA
SC-76
SC-79
-
-
-
SC-70
-
SC-70
-
SC-70
-
SC-70
-
SC-88
-
-
SC-88
Configuration
single diode
single diode
single diode
single diode
single diode
single diode
dual series
dual series
dual common cathode
dual common cathode
dual common anode
dual common anode
dual isolated
dual isolated
dual isolated
triple isolated
quadruple; 2 series
1.2 Features
High switching speed
High breakdown voltage
Low leakage current
Low capacitance
1.3 Applications
Ultra high-speed switching
Voltage clamping
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NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
4. Marking
Table 5. Marking codes
Type number
Marking code[1]
1PS76SB70
S2
1PS79SB70
G
BAS70
73*
BAS70H
AH
BAS70L
S8
BAS70W
73*
BAS70-04
74*
BAS70-04W
74*
BAS70-05
75*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Type number
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07S
BAS70-07V
BAS70VV
BAS70XY
-
Marking code[1]
75*
76*
76*
77*
77*
77
N1
70*
-
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR reverse voltage
-
IF forward current
-
IFRM
repetitive peak forward
tp ≤ 1 s; δ ≤ 0.5
current
-
IFSM non-repetitive peak forward tp ≤ 10 ms
current
[1] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
−65
−65
[1] Tj = 25 °C prior to surge.
Max Unit
70 V
70 mA
70 mA
100 mA
150
+150
+150
°C
°C
°C
BAS70_1PS7XSB70_SER_9
Product data sheet
Rev. 09 — 13 January 2010
© NXP B.V. 2010. All rights reserved.
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| Download | [ BAS70-06.PDF Datasheet ] | |
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