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BAS70-06 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS70-06
기능 Surface mount Schottky-Barrier Single-/ Double-Diodes
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BAS70-06 데이터시트, 핀배열, 회로
BAS70 ...-04 ...-05 ...-06
Schottky-Diodes
Surface mount Schottky-Barrier Single-/ Double-Diodes
Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage
Version 2004-04-09
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Power dissipation
Verlustleistung
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
310 mW
40 V
SOT-23
(TO-236)
0.01 g
Dimensions / Maße in mm
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
per diode / pro Diode
Power dissipation – Verlustleistung
Max. average forward current (dc)
Dauergrenzstrom
Ptot
IFAV
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current tp # 1 s
Stoßstrom-Grenzwert
IFRM
IFSM
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
Grenzwerte (TA = 25/C)
BAS70-series
310 mW 1)
200 mA 1)
300 mA 1)
500 mA
70 V
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
Forward voltage - Durchlaßspannung 2)
Leakage current - Sperrstrom 2)
IF = 1 mA
IF = 15 mA
VR = 50 V
Kennwerte (Tj = 25/C)
VF < 410 mV
VF < 1000 mV
IR < 100 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
1






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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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링크공유

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