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BAS70H-06 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS70H-06
기능 SURFACE MOUNT SCHOTTKY BARRIER DIODE
제조업체 Diodes Incorporated
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BAS70H-06 데이터시트, 핀배열, 회로
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
DISCONTINUED -
· Low Turn-on Voltage
USE BAS70 SERIES
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
A
Dim
A
SOT-23
Min
0.37
Max
0.51
B 1.19 1.40
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams
· Approx. Weight: 0.008 grams
TOP VIEW
BC
ED
G
H
K
J
L
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
M K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
BAS70H Marking: K73
BAS70H-04 Marking: K74
BAS70H-05 Marking: K75
BAS70H-06 Marking: K76
Maximum Ratings and Electrical Characteristics, Single Diode@ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
Pd
RqJA
Tj
TSTG
BAS70
70
49
200
600
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
K/W
°C
°C
Electrical Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IRM
Cj
trr
Min
70
¾
¾
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS30190 Rev. 4 - 4
1 of 1
Max
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
IR = 10mA
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
RL =100W
BAS70H/-04/-05/-06






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