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BAS70JW PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BAS70JW
기능 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
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BAS70JW 데이터시트, 핀배열, 회로
BAS70JW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Features
· Low Forward Voltage Drop
· Fast Switching
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and
ESD Protection
Mechanical Data
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Orientation: See Diagram
· Weight: 0.006 grams (approx.)
· Marking: K78
A
BC
H
K
J
DF
L
C1 C2
(Jumper
connection
between
middle pins)
A1 A2
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
M
G 1.80 2.20
H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Pd
RqJA
Tj
TSTG
Value
70
49
70
100
200
625
-55 to +125
-65 to +125
Unit
V
V
mA
mA
mW
K/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol
VFM
IRM
Cj
trr
Min
¾
¾
¾
¾
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
Max
410
1000
100
2.0
5.0
Unit
mV
mV
nA
pF
ns
Test Condition
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
IF = IR = 10mA to IR = 1.0mA,
Irr = 0.1 x IR, RL = 100W
DS30188 Rev. E-2
1 of 1
BAS70JW






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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

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