Datasheet BAS78B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BAS78B	Silicon Switching Diodes (Switching applications High breakdown voltage) Silicon Switching Diodes BAS 78 A … BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-2	Siemens Semiconductor Group	diode
2	BAS78B	Silicon Switching Diodes BAS78A...BAS78D Silicon Switching Diodes Switching applications High breakdown voltage 4 3 2 1 2, 4 1 EHA00004 VPS05163 Type BAS78A BAS78B BAS78C BAS78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking BAS 78A BAS 78B BAS 78C	Infineon Technologies AG	diode

BAS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BAS100ATB6	SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 100 Volts FEATURES • Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICA	Pan Jit International	diode
2	BAS101	High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m BAS101; BAS101S High-voltage switching diodes Rev. 01 — 8 September 2006 Product data sheet 1. Product proﬁle 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Produc	NXP Semiconductors	diode
3	BAS101S	High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m BAS101; BAS101S High-voltage switching diodes Rev. 01 — 8 September 2006 Product data sheet 1. Product proﬁle 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Produc	NXP Semiconductors	diode
4	BAS11	Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product speciﬁcation Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product speciﬁcation Controlled avalanche rectiﬁers FEATURES • Glass passivated • High maximum o	NXP Semiconductors	rectifier
5	BAS116	SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS116 SWITCHING DIODE FEATURES z Low leakage current applications z Medium speed switching times MARKING: JV SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re	JCET	diode
6	BAS116	LOW LEAKAGE SWITCHING DIODE BAS116 LOW LEAKAGE SWITCHING DIODE Features • Plastic SMD package • Low leakage current • High switching speed Application • Low leakage current applications in surface mounted circuits. 3 12 Marking Code: JV SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetiti	SEMTECH	diode
7	BAS116	LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance	Pan Jit International	diode

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Número de pieza	Descripción	Fabricantes	PDF
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