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부품번호 | BAT20J 기능 |
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기능 | HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 5 페이지수
® BAT20J
HIGH EFFICIENCY SWITCHING AND
ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
IR 25°C(max) @ 15V
Tj (max)
1A
23 V
12 µA
150 °C
AK
FEATURES AND BENEFITS
■ Low conduction losses
■ Very low reverse current
■ Negligible switching losses
■ Low capacitance diode
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
DESCRIPTION
The BAT20J is using 23V schottky barrier diode
encapsulated on a SOD-323 package. This is spe-
cially suited for switching mode in mobile phone
and PDA power management applications or LED
driver circuits (step up converters).
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
TL
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
Average forward current
δ = 0.38
Surge non repetitive forward current (tp=10ms sinusoidal)
Maximum storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during *
Value
23
2
1
5
- 65 to +150
150
260
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a)
Order code
Part Number
BAT20JFILM
April 2004 - Ed: 1
Marking
20
Unit
V
A
A
A
°C
°C
°C
1/5
BAT20J
Fig. 7-1: Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
1.E+01
1.E+00
Tj=150°C
1.E-01
Tj=85°C
1.E-02
1.E-03
Tj=25°C
1.E-04
VFM(V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Fig. 7-2: Forward voltage drop versus forward
current (low level).
IFM(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
Tj=150°C
(typical values)
Tj=85°C
(typical values)
Tj=25°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
0.2 0.3 0.4 0.5 0.6 0.7
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (epoxy
printed circuit board FR4, eCU=35µm, typical
values).
Rth(j-a)(°C/W)
600
550
500
450
400
350
300
250
200
150
100
50
0
0
SCu(mm²)
5 10 15 20 25 30 35 40 45 50
Fig. 9: Thermal resistance junction to ambient
versus power dissipation (epoxy printed circuit
board FR4, eCU=35µm, typical values).
Rth(j-a)(°C/W)
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0 50 100
P(mW)
150 200 250
SCU=2.25mm2
Tamb=25°C
300 350 400
4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ BAT20J.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BAT20J | HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE | STMicroelectronics |
BAT20JFILM | HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |