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PDF BAV170 Data sheet ( Hoja de datos )
| Número de pieza | BAV170 | |
| Descripción | Low-leakage double diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV170 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2003 Mar 25
1 page  
NXP Semiconductors
Low-leakage double diode
102
handbook, full pagewidth
IFSM
(A)
10
Product data sheet
BAV170
MBG704
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
handboo1k,0h2alfpage
IR
(nA)
10
(1)
MLB754
1
10 1
10 2
(2)
10 3
0
50
VR = 75 V.
(1) Maximum values.
(2) Typical values.
100 150 T j (oC) 200
Fig.5 Reverse current as a function of junction
temperature; per diode.
2003 Mar 25
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0 5 10 15 VR (V) 20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BAV170.PDF ] | |
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