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Datasheet BAV70LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAV70LT1 | DIODE RoHS BAV70LT1
SOT-23 Plastic-Encapsulate Diodes
BAV70LT1 SWITCHING DIODE
DFEATURES
TPower dissipation
.,LPD: 225 mW(Tamb=25℃)
Forward Current
IF:
OReverse Voltage
200 mA
2.9 1.9 0.95 0.95 0.4
VR: 70 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +15℃
1
1.
2.4 |  WEJ | diode |
| 2 | BAV70LT1 | CASE 318-08/ STYLE 9 SOT-23 (TO-236AB) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAV70LT1/D
Monolithic Dual Switching Diode Common Cathode
ANODE 1 3 CATHODE 2 ANODE
BAV70LT1
Motorola Preferred Device
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Cu |  Motorola Inc | data |
| 3 | BAV70LT1 | Monolithic Dual Switching Diode Common Cathode
ON Semiconductort
Monolithic Dual Switching Diode Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
BAV70LT1
3 1 2
THERMAL CHARACTERISTICS
Characteristic T |  ON Semiconductor | diode |
| 4 | BAV70LT1 | Monolithic Dual Switching Diode Common Cathode
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode Common Cathode
BAV70LT1
3
1 ANODE 3 CATHODE 2 ANODE
1 2
CASE 318–08, STYLE 9 SOT–23 (TO–236AB)
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Su |  Leshan Radio Company | diode |
| 5 | BAV70LT1G | Dual Switching Diode Common Cathode BAV70L, SBAV70L
Dual Switching Diode Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATIN | ON Semiconductor | diode |
BAV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAV10 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV10 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 16
Philips Semiconductors
Product specification
High-speed diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6  NXP Semiconductors diode | | |
| 2 | BAV100 | Silicon Epitaxial Planar Diodes SURGE diode | | |
| 3 | BAV100 | Hermetically Sealed Glass High Voltage Switching Diodes Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are cor  Taiwan Semiconductor diode | | |
| 4 | BAV100 | Small Signal Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
!"# $
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Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Moisture Sensitivity Leve  MCC diode | | |
| 5 | BAV100 | HIGH SPEED SILICON DIODES Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101 BAV102, BAV103
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and Gener  CDIL diode | | |
| 6 | BAV100 | Surface Mount Small Signal Switching Diode Elektronische Bauelemente
BAV100 ~ BAV103
Surface Mount Small Signal Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOD-80 (Mini-MELF) Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction  SeCoS diode | | |
| 7 | BAV100 | Ultrafast silicon rectifier diodes BAV 100...BAV 103
Surface mount diode
Ultrafast silicon rectifier diodes
BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V
Features
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 Semikron rectifier | |
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