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PDF BAV70LT1 Data sheet ( Hoja de datos )
| Número de pieza | BAV70LT1 | |
| Descripción | Monolithic Dual Switching Diode Common Cathode | |
| Fabricantes | Leshan Radio Company | |
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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
BAV70LT1
3
CATHODE
1
ANODE
2
ANODE
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VR
IF
I FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 25 Vdc, T J = 150°C)
(V R = 70 Vdc)
(V R = 70 Vdc, T J = 150°C)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Reverse Recovery Time R L = 100 Ω
(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)
IR
CD
VF
t rr
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
70
—
—
—
—
—
—
—
—
—
Max
—
60
2.5
100
1.5
715
855
1000
1250
6.0
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
Unit
Vdc
µAdc
pF
mVdc
ns
G5–1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BAV70LT1.PDF ] | |
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