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PDF BAV74LT1 Data sheet ( Hoja de datos )
| Número de pieza | BAV74LT1 | |
| Descripción | Monolithic Dual Switching Diode | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV74LT1/D
Monolithic Dual
Switching Diode
3
CATHODE
ANODE
1
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAV74LT1 = JA
Symbol
VR
IF
IFM(surge)
Value
50
200
500
Symbol
PD
Rq JA
PD
Rq JA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5.0 µAdc)
V(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
trr
BAV74LT1
3
1
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
Min Max Unit
50 — Vdc
µAdc
— 100
— 0.1
— 2.0 pF
— 1.0 Vdc
— 4.0 ns
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAV74LT1.PDF ] | |
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