BAV99W Datasheet PDF - NXP Semiconductors
| Part Number | BAV99W | |
| Description | High-speed switching diodes | |
| Manufacturers | NXP Semiconductors | |
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BAV99 series
High-speed switching diodes
Rev. 8 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV99
SOT23
-
BAV99S
SOT363 SC-88
BAV99W
SOT323 SC-70
JEDEC
TO-236AB
-
-
Configuration
dual series
quadruple; 2 series
dual series
Package
configuration
small
very small
very small
1.2 Features and benefits
High switching speed: trr ≤ 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd ≤ 1.5 pF
Reverse voltage: VR ≤ 100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 80 V
Min Typ
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
0.5
100
4
Unit
μA
V
ns
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NXP Semiconductors
BAV99 series
High-speed switching diodes
103
IF
(mA)
102
006aab132
10
(1) (2) (3) (4)
1
10−1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
0.8
Cd
(pF)
0.6
mbg446
0.4
0.2
102
IR
(μA)
10
006aab133
(1)
1 (2)
10−1
10−2
(3)
10−3
10−4
(4)
10−5
0
20 40 60 80 100
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
102
IFSM
(A)
10
mbg704
1
0
04 8
f = 1 MHz; Tamb = 25 °C
12 VR (V) 16
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
10−1
1
10 102 103 104
tp (μs)
Fig 4.
Based on square wave currents.
Tj = 25 °C; prior to surge
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAV99_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 November 2010
© NXP B.V. 2010. All rights reserved.
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