Datasheet.kr   

AT27C080-90JC 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT27C080-90JC은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AT27C080-90JC 자료 제공

부품번호 AT27C080-90JC 기능
기능 8-Megabit 1M x 8 UV Erasable CMOS EPROM
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


AT27C080-90JC 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

AT27C080-90JC 데이터시트, 핀배열, 회로
AT27C080
Features
Fast Read Access Time - 90 ns
Low Power CMOS Operation
- 100 µA max. Standby
- 40 mA max. Active at 5 MHz
JEDEC Standard Packages
- 32 Lead PLCC
- 32-Lead 600-mil PDIP and Cerdip
- 32-Lead 450-mil SOIC (SOP)
- 32-Lead TSOP
5V ± 10% Supply
High-Reliability CMOS Technology
- 2,000V ESD Protection
- 200 mA Latchup Immunity
RapidProgramming Algorithm - 50 µs/byte (typical)
CMOS and TTL Compatible Inputs and Outputs
Integrated Product Identification Code
Industrial and Commercial Temperature Ranges
Description
The AT27C080 chip is a low-power, high-performance 8,388,608-bit ultraviolet eras-
able programmable read only memory (EPROM) organized as 1M by 8 bits. The
AT27C080 requires only one 5V power supply in normal read mode operation. Any
byte can be accessed in less than 90 ns, eliminating the need for speed reducing
WAIT states on high-performance microprocessor systems.
Atmel’s scaled CMOS technology provides low active power consumption and fast
programming. Power consumption is typically 10 mA in active mode and less than 10
µA in standby mode.
(continued)
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
O0 - O7
Outputs
CE Chip Enable
OE Output Enable
TSOP Top View
Type 1
CDIP, PDIP, SOIC Top View
A19
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A18
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/VPP
23 A10
22 CE
21 07
20 06
19 05
18 04
17 03
A11
A9
A8
A13
A14
A17
A18
VCC
A19
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE/VPP
31 A10
30 CE
29 07
28 06
27 05
26 04
25 03
24 GND
23 02
22 01
21 O0
20 A0
19 A1
18 A2
17 A3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/VPP
23 A10
22 CE
21 07
8-Megabit
(1M x 8)
UV Erasable
CMOS EPROM
AT27C080
0360F-B–7/97
1




AT27C080-90JC pdf, 반도체, 판매, 대치품
DC and AC Operating Conditions for Read Operation
Operating Temperature (Case)
VCC Power Supply
Com.
Ind.
-90
0°C - 70°C
-40°C - 85°C
5V ± 10%
AT27C080
-10 -12
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
5V ± 10%
5V ± 10%
-15
0°C - 70°C
-40°C - 85°C
5V ± 10%
DC and Operating Characteristics for Read Operation
Symbol Parameter
Condition
Min Max
ILI
ILO
ISB
ICC
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC(1) Standby Current
VCC Active Current
Input Low Voltage
VIN = 0V to VCC (Com., Ind.)
VOUT = 0V to VCC (Com., Ind.)
ISB1 (CMOS), CE = VCC ± 0.3V
ISB2 (TTL), CE = 2.0 to VCC + 0.5V
f = 5 MHz, IOUT = 0 mA, CE = VIL
-0.6
±1.0
±5.0
100
1.0
40
0.8
Input High Voltage
2.0 VCC + 0.5
Output Low Voltage
IOL = 2.1 mA
0.4
Output High Voltage
IOH = -400 µA
2.4
1. VCC must be applied simultaneously or before OE/ VPP, and removed simultaneously or after OE/VPP.
Units
µA
µA
µA
mA
mA
V
V
V
V
AC Characteristics for Read Operation
-90
Symbol Parameter
Condition
Min Max
tACC(4)
tCE(3)
tOE(3)(4)
tDF(2)(5)
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE or CE High to Output Float,
whichever occurred first
CE = OE/VPP = VIL
OE = VIL
CE = VIL
90
90
20
30
tOH
Note:
Output Hold from Address, CE or
OE/VPP,whichever occurred first
2, 3, 4, 5. See AC Waveforms for Read Operation.
0
AT27C080
-10 -12
Min Max Min Max
100 120
100 120
20 30
30 35
00
-15
Min Max
150
150
35
40
0
Units
ns
ns
ns
ns
ns
4 AT27C080

4페이지










AT27C080-90JC 전자부품, 판매, 대치품
AT27C080
AC Programming Characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, OE/VPP = 13.0 ± 0.25V
Limits
Symbol Parameter
Test Conditions(1)
Min Max Units
tAS Address Setup Time
2.0
tOES OE/VPP Setup Time
2.0
tOEH
OE/VPP Hold Time
tDS Data SetupTime
Input Rise and Fall Times:
(10% to 90%) 20 ns.
2.0
2.0
tAH Address Hold Time
Input Pulse Levels:
0.0
tDH Data Hold Time
0.45V to 2.4V
2.0
tDFP CE High to Output Float Delay(2)
0.0
Input Timing Reference Level:
tVCS VCC Setup Time
0.8V to 2.0V
2.0
tPW CE Program Pulse Width(3)
tDV Data Valid from CE
tVR OE/VPP Recovery Time
Output Timing Reference Level:
0.8V to 2.0V
47.5
2.0
tPRT
OE/VPP Pulse Rise Time During
Programming
50
130
52.5
1.0
µs
µs
µs
µs
µs
µs
ns
µs
µs
µs
ns
ns
Notes:
1. VCC must be applied simultaneously or before OE/VPP and removed simultaneously or after OE/VPP.
2. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven—
see timing diagram.
3. Program Pulse width tolerance is 50 µs ± 5%.
Atmel’s 27C080 Integrated Product Identification Code
Codes
Manufacturer
Device Type
Pins
A0 O7 O6 O5 O4 O3 O2
0000111
1100010
O1
1
1
O0
0
0
Hex Data
1E
8A
7

7페이지


구       성 총 10 페이지수
다운로드[ AT27C080-90JC.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AT27C080-90JC

8-Megabit 1M x 8 UV Erasable CMOS EPROM

ATMEL Corporation
ATMEL Corporation
AT27C080-90JI

8-Megabit 1M x 8 UV Erasable CMOS EPROM

ATMEL Corporation
ATMEL Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵