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PDF AT27C800-12RI Data sheet ( Hoja de datos )
| Número de pieza | AT27C800-12RI | |
| Descripción | 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM | |
| Fabricantes | ATMEL Corporation | |
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AT27C800
Features
• Read Access Time - 100 ns
• Word-wide or Byte-wide Configurable
• 8-Megabit Flash and Mask ROM Compatable
• Low Power CMOS Operation
- 100 µA Maximum Standby
- 50 mA Maximum Active at 5 MHz
• Wide Selection of JEDEC Standard Packages
- 42-Lead 600 mil Cerdip and PDIP
- 44-Lead SOIC (SOP)
- 48-Lead TSOP (12 mm x 20 mm)
• 5V ± 10% Power Supply
• High Reliability CMOS Technology
- 2,000 ESD Protection
- 200 mA Latchup Immunity
• RapidTM Programming Algorithm - 50 µs/word (typical)
• CMOS and TTL Compatible Inputs and Outputs
• Integrated Product Identification Code
• Commercial and Industrial Temperature Ranges
Description
The AT27C800 is a low-power, high performance 8,388,608-bit UV erasable program-
mable read only memory (EPROM) organized as either 512K by 16 or 1024K by 8
bits. It requires a single 5V power supply in normal read mode operation. Any word
can be accessed in less than 100 ns, eliminating the need for speed-reducing WAIT
states. The x16 organization makes this part ideal for high-performance 16- and 32-bit
microprocessor systems.
(continued)
Pin Configurations
Pin Name
A0 - A18
O0 - O15
O15/A-1
BYTE/VPP
CE
OE
NC
Function
Addresses
Outputs
Output/Address
Byte Mode/
Program Supply
Chip Enable
Output Enable
No Connect
TSOP
Type 1
A15 1
A14 2
A13 3
A12 4
A11 5
A10 6
A9 7
A8 8
NC 9
NC 10
NC 11
NC 12
NC 13
NC 14
NC 15
A18 16
A17 17
A7 18
A6 19
A5 20
A4 21
A3 22
A2 23
A1 24
48 A16
47 BYTE/VPP
46 GND
45 O15/A-1
44 O7
43 O14
42 O6
41 O13
40 O5
39 O12
38 O4
37 VCC
36 O11
35 O3
34 O10
33 O2
32 O9
31 O1
30 O8
29 O0
28 OE
27 GND
26 CE
25 A0
CDIP, PDIP Top View
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 NC
41 A8
40 A9
39 A10
38 A11
37 A12
36 A13
35 A14
34 A15
33 A16
32 BYTE/VPP
31 GND
30 O15/A-1
29 O7
28 O14
27 O6
26 O13
25 O5
24 O12
23 O4
22 VCC
SOIC (SOP)
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 NC
43 NC
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE/VPP
32 GND
31 O15/A-1
30 O7
29 O14
28 O6
27 O13
26 O5
25 O12
24 O4
23 VCC
8-Megabit
(512K x 16 or
1024K x 8)
UV Erasable
EPROM
AT27C800
Preliminary
0801A-A
1
1 page  
Byte-Wide Read Mode AC Waveforms(1)
AT27C800
Note: 1. BYTE/VPP = VIL
Byte-Wide Read Mode AC Waveforms(1)
Note: 1. BYTE/VPP = VIH
BYTE Transition AC Waveforms
A0 - A18
A-1
BYTE/VPP
VALID
VALID
tACC
tOH
O0 - O7
O8 - O15
tOH
tSTD
DATA OUT
HI-Z
tST
DATA OUT
DATA OUT
Notes: 1. Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.
3. OE may be delayed up to tACC - tOE after the address is valid without impact on tACC.
4. This parameter is only sampled and is not 100% tested.
5. Output float is defined as the point when data is no longer driven.
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT27C800-12RI.PDF ] | |
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