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PDF AT28BV16 Data sheet ( Hoja de datos )
| Número de pieza | AT28BV16 | |
| Descripción | 16K 2K x 8 Battery-Voltage CMOS E2PROM | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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AT28BV16
Features
• 2.7 to 3.6V Supply
Full Read and Write Operation
• Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 250 ns
• Byte Write - 3 ms
•• Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
• High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
•• Commercial and Industrial Temperature Ranges
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
Pin Configurations
(continued)
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
TSOP
Top View
16K (2K x 8)
Battery-Voltage™
CMOS
E2PROM
AT28BV16
PDIP, SOIC
Top View
PLCC
Top View
0308A
2-119
1 page  
AC Read Characteristics
Symbol
tACC
tCE (1)
tOE (2)
tDF (3, 4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE High to Output Float
Output Hold from OE, CE or
Address, whichever occurred first
AC Read Waveforms (1, 2, 3, 4)
AT28BV16
AT28BV16-25
Min Max
250
250
100
0 55
0
AT28BV16-30
Min Max
300
300
100
0 55
0
Units
ns
ns
ns
ns
ns
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC.
Input Test Waveforms and
Measurement Level
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Output Test Load
tR, tF < 20 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ Max
CIN 4 6
COUT
8 12
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
2-123
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AT28BV16.PDF ] | |
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