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AT28BV16 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT28BV16
기능 16K 2K x 8 Battery-Voltage CMOS E2PROM
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AT28BV16 데이터시트, 핀배열, 회로
AT28BV16
Features
2.7 to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
•• Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
•• Commercial and Industrial Temperature Ranges
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
Pin Configurations
(continued)
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
TSOP
Top View
16K (2K x 8)
Battery-Voltage
CMOS
E2PROM
AT28BV16
PDIP, SOIC
Top View
PLCC
Top View
0308A
2-119




AT28BV16 pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT28BV16-25
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
Operating Modes
Mode
CE
Read
Write (2)
VIL
VIL
Standby/Write Inhibit
VIH
Write Inhibit
X
Write Inhibit
X
Output Disable
X
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
OE
VIL
VIH
X (1)
X
VIL
VIH
AT28BV16-30
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
WE I/O
VIH DOUT
VIL DIN
X High Z
VIH
X
X High Z
DC Characteristics
Symbol
ILI
ILO
ISB
ICC
VIL
VIH
Parameter
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Active Current AC
Input Low Voltage
Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC + 1.0V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1.0V
f = 5 MHz; IOUT = 0 mA; CE = VIL
IOL = 1 mA
IOL = 2 mA for RDY/BUSY
IOH = -100 µA
Min Max Units
5 µA
5 µA
50 µA
8 mA
0.6 V
2.0 V
0.3 V
0.3 V
2.0 V
2-122 AT28BV16

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AT28BV16 전자부품, 판매, 대치품
Data Polling Characteristics (1)
Symbol
Parameter
Min
tDH Data Hold Time
10
tOEH
tOE
OE Hold Time
OE to Output Delay (2)
10
tWR Write Recovery Time
0
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Characteristics.
AT28BV16
Typ Max Units
ns
ns
ns
ns
Data Polling Waveforms
2-125

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT28BV16

16K 2K x 8 Battery-Voltage CMOS E2PROM

ATMEL Corporation
ATMEL Corporation

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