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PDF AT28BV64 Data sheet ( Hoja de datos )
| Número de pieza | AT28BV64 | |
| Descripción | 64K (8K x 8) Battery-Voltage Parallel EEPROMs | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Features
• 2.7V to 3.6V Supply
– Full Read and Write Operation
• Low Power Dissipation
– 8 mA Active Current
– 50 µA CMOS Standby Current
• Read Access Time – 300 ns
• Byte Write – 3 ms
• Direct Microprocessor Control
– DATA Polling
– READY/BUSY Open Drain Output
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Industrial Temperature Ranges
64K (8K x 8)
Battery-Voltage
Parallel
EEPROMs
1. Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read-only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY and DATA polling of I/O7. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel’s AT28BV64 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32-bytes of EEPROM are available
for device identification or tracking.
AT28BV64
Not Recommended
for New Designs.
0493C–PEEPR–08/07
1 page  
AT28BV64
6. DC and AC Operating Range
Operating Temperature (Case)
VCC Power Supply
AT28BV64-30
-40°C - 85°C
2.7V to 3.6V
7. Operating Modes
Mode
Read
Write(2)
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
CE
VIL
VIL
VIH
X
X
X
OE
VIL
VIH
X(1)
X
VIL
VIH
8. DC Characteristics
Symbol
ILI
ILO
ISB
ICC
VIL
VIH
Parameter
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Active Current AC
Input Low Voltage
Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC + 1.0V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1.0V
f = 5 MHz; IOUT = 0 mA; CE = VIL
IOL = 1 mA
IOL = 2 mA for RDY/BUSY
IOH = -100 µA
WE
VIH
VIL
X
VIH
X
X
Min Max
5
5
50
8
0.6
2.0
0.3
0.3
2.0
I/O
DOUT
DIN
High Z
High Z
Units
µA
µA
µA
mA
V
V
V
V
V
0493C–PEEPR–08/07
5
5 Page 
20. Packaging Information
20.1 32J – PLCC
AT28BV64
1.14(0.045) X 45˚
PIN NO. 1
IDENTIFIER
1.14(0.045) X 45˚
0.318(0.0125)
0.191(0.0075)
E1 E
B
e
D1
D
B1 E2
A2
A1
A
0.51(0.020)MAX
45˚ MAX (3X)
COMMON DIMENSIONS
(Unit of Measure = mm)
D2
Notes:
1. This package conforms to JEDEC reference MS-016, Variation AE.
2. Dimensions D1 and E1 do not include mold protrusion.
Allowable protrusion is .010"(0.254 mm) per side. Dimension D1
and E1 include mold mismatch and are measured at the extreme
material condition at the upper or lower parting line.
3. Lead coplanarity is 0.004" (0.102 mm) maximum.
SYMBOL MIN NOM MAX NOTE
A 3.175 – 3.556
A1 1.524 – 2.413
A2 0.381
–
–
D 12.319 – 12.573
D1 11.354 – 11.506 Note 2
D2 9.906
– 10.922
E 14.859 – 15.113
E1 13.894 – 14.046 Note 2
E2 12.471 – 13.487
B 0.660 – 0.813
B1 0.330 – 0.533
e 1.270 TYP
10/04/01
TITLE
2325 Orchard Parkway 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC)
R San Jose, CA 95131
DRAWING NO. REV.
32J B
0493C–PEEPR–08/07
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AT28BV64.PDF ] | |
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