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AT28LV256 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT28LV256
기능 256K 32K x 8 Low Voltage CMOS E2PROM
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AT28LV256 데이터시트, 핀배열, 회로
AT28LV256
Features
Fast Read Access Time - 200 ns
•• Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
•• High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
Single 3.3V ± 5% Supply
JEDEC Approved Byte-Wide Pinout
•• Commercial and Industrial Temperature Ranges
Description
The AT28LV256 is a high-performance Electrically Erasable and Programmable
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 200 µA.
The AT28LV256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to
Pin Configurations
(continued)
Pin Name
A0 - A14
Function
Addresses
PDIP, SOIC
Top View
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
256K (32K x 8)
Low Voltage
CMOS
E2PROM
AT28LV256
PLCC
Top View
TSOP
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0273E
2-145




AT28LV256 pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
Operating Modes
Mode
CE
Read
Write (2)
VIL
VIL
Standby/Write Inhibit
VIH
Write Inhibit
X
Write Inhibit
X
Output Disable
X
Chip Erase
VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
AT28LV256-20
0°C - 70°C
-40°C - 85°C
3.3V ± 5%
AT28LV256-25
0°C - 70°C
-40°C - 85°C
3.3V ± 5%
OE WE
VIL VIH
VIH
X (1)
VIL
X
X VIH
VIL X
VIH
VH (3)
3. VH = 12.0V ± 0.5V.
X
VIL
I/O
DOUT
DIN
High Z
High Z
High Z
DC Characteristics
Symbol
ILI
ILO
Parameter
Input Load Current
Output Leakage Current
ISB VCC Standby Current CMOS
ICC VCC Active Current
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
Com.
Ind.
IOL = 1.6 mA
IOH = -100 µA
Min Max Units
10 µA
10 µA
20 µA
50 µA
15 mA
0.6 V
2.0 V
0.3 V
2.0 V
2-148 AT28LV256

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AT28LV256 전자부품, 판매, 대치품
AT28LV256
Page Mode Characteristics
Symbol
Parameter
tWC Write Cycle Time
tAS Address Set-up Time
tAH Address Hold Time
tDS Data Set-up Time
tDH Data Hold Time
tWP Write Pulse Width
tBLC Byte Load Cycle Time
tWPH
Write Pulse Width High
Programming Algorithm
Min Max Units
10 ms
0 ns
50 ns
50 ns
0 ns
200 ns
150 µs
100 ns
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS (3)
WRITES ENABLED (2)
Notes:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Data protect state will be re-activated at the end of program
cycle.
3. 1 to 64-bytes of data are loaded.
LOAD LAST BYTE
TO
LAST ADDRESS (3)
ENTER DATA
PROTECT STATE
Software Protected Write Cycle Waveforms (1, 2, 3)
Notes: 1. A0 - A14 must conform to the addressing sequence for 2. A6 through A14 must specify the same page address during
the first three bytes as shown above.
each high to low transition of WE (or CE) after the software
code has been entered.
3. OE must be high only when WE and CE are both low.
2-151

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부품번호상세설명 및 기능제조사
AT28LV256

256K 32K x 8 Low Voltage CMOS E2PROM

ATMEL Corporation
ATMEL Corporation

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