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AT28LV64B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT28LV64B
기능 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
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AT28LV64B 데이터시트, 핀배열, 회로
AT28LV64B
Features
Single 3.3V ± 10% Supply
3-Volt-Only Read and Write Operation
Software-Protected Programming
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Fast Read Access Time 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
DATA Polling for End of Write Detection
•• High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
•• Commercial and Industrial Temperature Ranges
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-
lected, the CMOS standby current is less than 20 µA.
The AT28LV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
Pin Configurations
(continued)
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PDIP, SOIC
Top View
64K (8K x 8)
Low Voltage
CMOS
E2PROM with
Page Write and
Software Data
Protection
AT28LV64B
PLCC
Top View
TSOP
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
0299C
2-135




AT28LV64B pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT28LV64B-20
0°C - 70°C
-40°C - 85°C
3.3V ± 10%
AT28LV64B-25
0°C - 70°C
-40°C - 85°C
3.3V ± 10%
Operating Modes
Mode
CE
Read
Write (2)
VIL
VIL
Standby/Write Inhibit
VIH
Write Inhibit
X
Write Inhibit
X
Output Disable
X
Chip Erase
VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
OE
VIL
VIH
X (1)
X
VIL
VIH
VH (3)
3. VH = 12.0V ± 0.5V.
WE
VIH
VIL
X
VIH
X
X
VIL
I/O
DOUT
DIN
High Z
High Z
High Z
DC Characteristics
Symbol
ILI
ILO
Parameter
Input Load Current
Output Leakage Current
ISB VCC Standby Current CMOS
ICC VCC Active Current
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
Com.
Ind.
IOL = 1.6 mA
IOH = -100 µA
Min Max Units
10 µA
10 µA
20 µA
50 µA
15 mA
0.6 V
2.0 V
0.45 V
2.0 V
2-138 AT28LV64B

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AT28LV64B 전자부품, 판매, 대치품
AT28LV64B
Page Mode Characteristics
Symbol
tWC
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Write Algorithm (1)
LOAD DATA AA
TO
ADDRESS 1555
LOAD DATA 55
TO
ADDRESS 0AAA
LOAD DATA A0
TO
ADDRESS 1555
LOAD DATA XX
TO
ANY ADDRESS (3)
WRITES ENABLED (2)
Min Max
10
0
100
100
0
200
100
100
Notes for software program code:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A12 - A0 (Hex).
2. Data protect state will be re-activated at
the end of the write cycle.
3. 1 to 64-bytes of data are loaded.
LOAD LAST BYTE
TO
LAST ADDRESS
ENTER DATA
PROTECT STATE
Software Data Protection Write Cycle Waveforms (1, 2, 3)
Units
ms
ns
ns
ns
ns
ns
µs
ns
Notes: 1. A0 - A12 must conform to the addressing sequence for
the first three bytes as shown above.
2. A6 through A12 must specify the same page address during
each high to low transition of WE (or CE)
after the software code has been entered.
3. OE must be high only when WE and CE are both low.
2-141

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부품번호상세설명 및 기능제조사
AT28LV64B

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

ATMEL Corporation
ATMEL Corporation

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