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PDF AT29BV020-25 Data sheet ( Hoja de datos )
| Número de pieza | AT29BV020-25 | |
| Descripción | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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AT29BV020
Features
Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time - 250 ns
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
(continued)
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage™
CMOS Flash
Memory
AT29BV020
TSOP Top View
Type 1
PLCC Top View
0402B
4-13
1 page  
AC Read Characteristics
Symbol
tACC
tCE (1)
tOE (2)
tDF (3, 4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or Address,
whichever occurred first
AC Read Waveforms
AT29BV020-25
Min Max
250
250
0 120
0 60
0
AT29BV020
AT29BV020-35
Min Max
350
350
0 150
0 75
0
Units
ns
ns
ns
ns
ns
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC .
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC .
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ Max
CIN 4 6
COUT
8 12
Note: 1. These parameters are characterized and not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
4-17
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT29BV020-25.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AT29BV020-25 | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| AT29BV020-25JC | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| AT29BV020-25JI | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| AT29BV020-25TC | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
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