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AT29BV040A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT29BV040A
기능 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
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AT29BV040A 데이터시트, 핀배열, 회로
AT29BV040A
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
2048 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 16 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
2.7-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29BV040A does not require
high input voltages for programming. The device can be operated with a single 2.7V
to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data
are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256-bytes of data are captured
at microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automat-
ically erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
4 Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
CMOS Flash
Memory
Preliminary
AT29BV040A
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
0383B
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AT29BV040A pdf, 반도체, 판매, 대치품
DC and AC Operating Range
AT29BV040A-25
AT29BV040A-35
Operating
Temperature (Case)
VCC Power Supply (1)
Com.
Ind.
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
1. After power is applied and VCC is at the minimum specified data sheet value, the system should wait 20 ms before an
operational mode is started.
Operating Modes
Mode
Read
Program (2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Product Identification
Hardware
CE
VIL
VIL
VIH
X
X
X
VIL
OE
VIL
VIH
X (1)
X
VIL
VIH
VIL
Software (5)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
WE Ai I/O
VIH Ai DOUT
VIL Ai DIN
X X High Z
VIH
X
X High Z
VIH
A1 - A18 = VIL, A9 = VH (3),
A0 = VIL
A1 - A18 = VIL, A9 = VH (3),
A0 = VIH
Manufacturer Code (4)
Device Code (4)
A0 = VIL, A1 - A18 = VIL
Manufacturer Code (4)
A0 = VIH, A1 - A18 = VIL
Device Code (4)
4. Manufacturer Code is 1F. Device Code is C4.
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol
ILI
ILO
Parameter
Input Load Current
Output Leakage Current
ISB1 VCC Standby Current CMOS
ISB2 VCC Standby Current TTL
ICC VCC Active Current
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
Com.
Ind.
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA; VCC = 3.6V
IOL = 1.6 mA; VCC = 3.0V
IOH = -100 µA; VCC = 3.0V
Min
2.0
2.4
Max
1
1
20
50
1
15
0.6
.45
Units
µA
µA
µA
µA
mA
mA
V
V
V
V
4-26 AT29BV040A

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AT29BV040A 전자부품, 판매, 대치품
Program Cycle Characteristics
Symbol
tWC
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Min
10
100
100
10
200
200
Software Protected Program Waveform
AT29BV040A
Max Units
20 ms
ns
ns
ns
ns
ns
150 µs
ns
Notes: 1. OE must be high when WE and CE are both low.
2. A8 through A18 must specify the sector address
during each high to low transition of WE (or CE)
after the software code has been entered.
Programming Algorithm (1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
WRITES ENABLED
LOAD DATA
TO (3)
SECTOR (256 BYTES)
ENTER DATA
(2)
PROTECT STATE
3. All bytes that are not loaded within the sector being
programmed will be indeterminate.
Notes for software program code:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Data Protect state will be re-activated at end of program cycle.
3. 256-bytes of data MUST BE loaded.
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부품번호상세설명 및 기능제조사
AT29BV040A

4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

ATMEL Corporation
ATMEL Corporation
AT29BV040A-25

4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

ATMEL Corporation
ATMEL Corporation

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