|
|
PDF AT29BV040A-25 Data sheet ( Hoja de datos )
| Número de pieza | AT29BV040A-25 | |
| Descripción | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AT29BV040A-25 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
AT29BV040A
Features
Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time - 250 ns
•• Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
2048 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 16 KB Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
2.7-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29BV040A does not require
high input voltages for programming. The device can be operated with a single 2.7V
to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data
are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256-bytes of data are captured
at microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automat-
ically erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
4 Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage™
CMOS Flash
Memory
Preliminary
AT29BV040A
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
0383B
4-23
1 page  
AC Read Characteristics
Symbol Parameter
tACC
tCE (1)
tOE (2)
tDF (3, 4)
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
tOH
Output Hold from OE, CE or Address,
whichever occurred first
AC Read Waveforms
AT29BV040A
AT29BV040A-25
Min Max
250
250
0 120
0 60
0
AT29BV040A-35
Min Max
350
350
0 150
0 75
0
Units
ns
ns
ns
ns
ns
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC .
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC .
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ Max
CIN 4 6
COUT
8 12
Note: 1. These parameters are characterized and not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
4-27
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AT29BV040A-25.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AT29BV040A-25 | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| AT29BV040A-25TC | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| AT29BV040A-25TI | 4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory | ATMEL Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |