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PDF AT29C010A-12TC Data sheet ( Hoja de datos )
| Número de pieza | AT29C010A-12TC | |
| Descripción | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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AT29C010A
Features
Fast Read Access Time - 70 ns
• 5-Volt-Only Reprogramming
•• Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Two 8 KB Boot Blocks with Lockout
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time - 10 ms
• DATA Polling for End of Program Detection
•• Low Power Dissipation
50 mA Active Current
100 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
•• Single 5V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
1 Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 100 µA. The device endurance is such that any sector can typically be writ-
ten to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C010A does not require
high input voltages for programming. Five-volt-only commands determine the opera-
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DIP Top View
(continued)
AT29C010A
PLCC Top View
TSOP Top View
Type 1
0394B
4-129
1 page  
AT29C010A
AC Read Characteristics
Symbol Parameter
tACC
tCE (1)
tOE (2)
tDF (3, 4)
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE,
tOH CE or Address,
whichever occurred first
AT29C010A-70 AT29C010A-90 AT29C010A-12 AT29C010A-15
Min Max
Min Max Min Max Min Max
70 90 120 150
70
90 120
150
0 35
0 40 0 50 0 70
0 25
0 25 0 30 0 40
0
00
0
Units
ns
ns
ns
ns
ns
AC Read Waveforms (1, 2, 3, 4)
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC .
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC .
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
70 ns
90/120/150 ns
tR, tF < 5 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ Max
CIN 4 6
COUT
8 12
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
4-133
5 Page 
AT29C010A
4-139
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AT29C010A-12TC.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| AT29C010A-12TC | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory | ATMEL Corporation |
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