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부품번호 | AT29C256-12 기능 |
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기능 | 256K 32K x 8 5-volt Only CMOS Flash Memory | ||
제조업체 | ATMEL Corporation | ||
로고 | |||
전체 12 페이지수
AT29C256
Features
Fast Read Access Time - 70 ns
• 5-Volt-Only Reprogramming
•• Page Program Operation
Single Cycle Reprogram (Erase and Program)
Internal Address and Data Latches for 64-Bytes
Internal Program Control and Timer
• Hardware and Software Data Protection
•• Fast Program Cycle Times
Page (64-Byte) Program Time - 10 ms
Chip Erase Time - 10 ms
DATA Polling for End of Program Detection
•• Low Power Dissipation
50 mA Active Current
300 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
•• Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
•• Commercial and Industrial Temperature Ranges
256K (32K x 8)
5-volt Only
CMOS Flash
Memory
Description
The AT29C256 is a 5-volt-only in-system Flash programmable and erasable read only
memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-
lected, the CMOS standby current is less than 300 µA. The device endurance is such
that any sector can typically be written to in excess of 10,000 times.
Pin Configurations
Pin Name Function
DIP Top View
(continued)
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
AT29C256
PLCC Top View
TSOP Top View
Type 1
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
0046L
4-93
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT29C256-70
0°C - 70°C
-40°C - 85°C
5V ± 5%
AT29C256-90
0°C - 70°C
-40°C - 85°C
5V ± 10%
AT29C256-12
0°C - 70°C
-40°C - 85°C
5V ± 10%
AT29C256-15
0°C - 70°C
-40°C - 85°C
5V ± 10%
Operating Modes
Mode
Read
Program (2)
5V Chip Erase
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
High Voltage Chip Erase
Product Identification
Hardware
CE
VIL
VIL
VIL
VIH
X
X
X
VIL
VIL
OE
VIL
VIH
VIH
X (1)
X
VIL
VIH
VH (3)
VIL
Software (5)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
WE Ai I/O
VIH Ai DOUT
VIL Ai DIN
VIL Ai
X X High Z
VIH
X
X High Z
VIL X High Z
VIH
A1 - A14 = VIL, A9 = VH,
A0 = VIL
A1 - A14 = VIL, A9 = VH,
A0 = VIH
Manufacturer Code (4)
Device Code (4)
A0 = VIL
Manufacturer Code (4)
A0 = VIH
Device Code (4)
4. Manufacturer Code: 1F, Device Code: DC
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol Parameter
Condition
Min Max Units
ILI Input Load Current
VIN = 0V to VCC
10 µA
ILO Output Leakage Current
VI/O = 0V to VCC
10 µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
300 µA
ISB2 VCC Standby Current TTL
CE = 2.0V to VCC
3 mA
ICC VCC Active Current
f = 5 MHz; IOUT = 0 mA
50 mA
VIL Input Low Voltage
0.8 V
VIH Input High Voltage
2.0 V
VOL Output Low Voltage
IOL = 2.1 mA
.45 V
VOH1
Output High Voltage
IOH = -400 µA
2.4
V
VOH2
Output High Voltage CMOS
IOH = -100 µA; VCC = 4.5V
4.2
V
4-96 AT29C256
4페이지 Program Cycle Characteristics
Symbol
tWC
tAS
tAH
tDS
tDH
tWP
tBLC
tWPH
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Program Cycle Waveforms (1, 2, 3)
Min
0
50
35
0
90
100
AT29C256
Max Units
10 ms
ns
ns
ns
ns
ns
150 µs
ns
Notes: 1. A6 through A14 must specify the page address
during each high to low transition of WE (or CE).
2. OE must be high when WE and CE are both low.
3. All bytes that are not loaded within the page being
programmed will be indeterminate.
4-99
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ AT29C256-12.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
AT29C256-12 | 256K 32K x 8 5-volt Only CMOS Flash Memory | ATMEL Corporation |
AT29C256-12JC | 256K 32K x 8 5-volt Only CMOS Flash Memory | ATMEL Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |