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AT29C432-15TI 데이터시트 PDF




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부품번호 AT29C432-15TI 기능
기능 4 Megabit 5-volt Flash with 256K E2PROM Memory
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AT29C432-15TI 데이터시트, 핀배열, 회로
Features
ConcurrentFlashMemory
Unique Architecture Allows the Flash Array
To Be Read During the E2PROM Write Cycle
4 Megabit 5-volt Flash
Configured as a 512K x 8 Memory Array
120 ns Read Access Time
Sector Program Operation
Single Cycle Reprogram (No Erase Necessary)
2048 Sectors, 256-Bytes Wide
10 ms Sector Rewrite
JEDEC Standard Software Data Protection
256K bit Full Feature E2PROM
Configured as a 32K x 8 Memory Array
Byte or Page (16 bytes) Write Capability
Write Cycle Time: 10 ms
JEDEC Standard Software Data Protection
Pinout Similar to 32-Pin 4 Mb Flash
•• Data Memory Endurance: 10,000 cycles
Description
The AT29C432 is a CMOS memory specifically designed for applications requiring
both a high density nonvolatile program memory and a smaller nonvolatile data mem-
ory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated
with a 256K bit full featured E2PROM array on the same device. A unique feature of
this device is its concurrent read while writing capability. This provides the host sys-
tem read access to the Flash program memory during the write cycle time of the
E2PROM.
The two memory arrays share all I/O lines, Address lines and OE and WE inputs.
Each memory array has its own Chip Enable input: CEF for the Flash array and CEE
for the E2PROM array.
Additionally, Software Data Protection has been independently implemented for both
arrays and is always enabled. The AT29C432 has a pinout similar to the AT29C040A
Flash memory. A system designer using a Flash memory for program storage and
another smaller, non volatile memory for data storage can easily replace both memo-
ries with the AT29C432.
4 Megabit
5-volt Flash with
256K E2PROM
Memory
AT29C432
ConcurrentFlash
Preliminary
Pin Configurations
Pin Name Function
A0 - A18 Addresses
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
CEE
Chip Enable E2PROM
CEF
Chip Enable Flash
NC No Connect
TSOP
Type 1




AT29C432-15TI pdf, 반도체, 판매, 대치품
Device Operation (Continued)
Memory Arrays
Concurrent Read While Write
The architecture of the AT29C432 provides concurrent
read while write capability. With other programmable non-
volatile memories internal high voltage operations prevent
the reading of data while a write operation is in process.
However, the AT29C432 is partitioned in a manner to al-
low read operations from the Flash memory array during a
write operation within the E2PROM memory array.
Conceptually the device was designed assuming the
Flash memory array would be utilized for infrequently up-
dated program storage and the E2PROM memory array
would be used for frequently updated data storage. This
simple concept eliminates complicated software and hard-
ware schemes using multiple blocks of memory just to
hold duplicate down-load routines.
Valid Concurrent Read
Reads from the Flash are allowed throughout the
E2PROM write cycle time (tWCE). The E2PROM memory
array must be deselected (CEE HIGH).
Reads from the Flash are allowed during tWPH o f a
E2PROM write so long as tBLC for the E2PROM write is not
violated. The E2PROM memory array must be deselected
(CEE HIGH).
Invalid Concurrent Reads
Attempts to read the Flash memory array during tWCF will
effectively be polling operations.
Attempts to access the Flash memory array while CEE is
low will be ignored. That is, CEE low and CEF low at the
same time is not allowed. Attempts to read the E2PROM
memory array while a write to the Flash memory array is
in progress is not allowed.
Absolute Maximum Ratings*
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Parameter
Typ
CIN Input Capacitance
4
COUT Output Capacitance
8
Note: 1. This parameter is characterized and is not 100% tested.
4 AT29C432
Max
10
12
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V

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AT29C432-15TI 전자부품, 판매, 대치품
Flash Array
AC Write Timing Characteristics
Symbol
tWCF
tAS
tAH
tWP
tOES
tDS
tDH
tCS
tCH
tOEH
tWPH
tBLC
Parameter
Write Cycle Time
Address Set-up Time
Address Hold Time
Write Pulse Width (WE or CEF)
OE Disable to WE or CEF Active
Data Set-up Time
Data Hold Time
CEF to WE or WE to CEF Setup Time
CEF to WE or WE to CEF Hold Time
WE or CEF Disable to OE Active
WE or CEF Pulse Width High
Byte Load Cycle Time
AC Flash Array Write Waveforms
AT29C432
Min Max Units
10 ms
0 ns
50 ns
100 ns
0 ns
50 ns
10 ns
0 ns
0 ns
10 ns
100 ns
150 µs
Note: 1. BYTE ADDRESS is the first destination address for the sector write operation. All write operations must begin with the
three byte write enable sequence.
7

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4 Megabit 5-volt Flash with 256K E2PROM Memory

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