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PDF AM80610-030 Data sheet ( Hoja de datos )
| Número de pieza | AM80610-030 | |
| Descripción | RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
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AM80610-030
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
..... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLF L (S042)
hermetically sealed
ORDER CODE
AM80610-030
BRANDING
80610-30
DE S CRI P T IO N
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPAC™ hermetic
package.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
Power Dissipation* (TC ≤ 50°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature
T ST G
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
57
3.0
32
200
− 65 to +200
Unit
W
A
V
°C
°C
2.6 °C/W
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM80610-030.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| AM80610-030 | RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS | STMicroelectronics |
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