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PDF AM80912-030 Data sheet ( Hoja de datos )
| Número de pieza | AM80912-030 | |
| Descripción | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM80912-030
RF & MICROWAVE TRANSISTORS
SPECIALITY AVIONICS/JTIDS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 7.8 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM80912-030
BRANDING
80912-30
DESCRIPTION
The AM80912-030 device is a high power Class C
transistor specifically designed for JTIDS pulsed out-
put and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles and temperatures and is
capable of withstanding 15:1 output VSWR at rated
RF conditions.
Low RF thermal resistance and computerized auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM80912-030 is supplied in the hermetic met-
al/ceramic package with internal input matching
structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 85°C)
IC Collector Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
75
3.5
40
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation.
August 1992
2.2 °C/W
1/6
1 page  
TEST CIRCUIT
AM80912-030
PACKAGE MECHANICAL DATA
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AM80912-030.PDF ] | |
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