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PDF AM83135-005 Data sheet ( Hoja de datos )
| Número de pieza | AM83135-005 | |
| Descripción | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM83135-005
RF & MICROWAVE TRANSISTORS
........ S-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALL IZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
O RDER CODE
AM83135-005
BRANDING
83135-5
DE SC RI P TI O N
The AM83135-005 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC™
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for
military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Sy mb o l
PD IS S
IC
VCC
TJ
TSTG
Parameter
P ower Dissipation*
Device Current*
(TC ≤ 100°C)
Collector-Supply Voltage*
J un ction Temperature (Pulsed RF Operation)
S torage Temperature
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Va l u e
40
1.8
34
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) J un ction-Cas e Thermal R e sistance*
*Applies only to rated RF a mplifier oper ation
August 23, 1996
3.75
°C/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM83135-005.PDF ] | |
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