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DB101 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DB101
기능 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
제조업체 Rectron Semiconductor
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DB101 데이터시트, 핀배열, 회로
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
DB101
THRU
DB107
FEATURES
* Good for automation insertion
* Surge overload rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
FEATURES
* Epoxy : UL flammability classification 94V-0
* UL listed under the recognized component directory, file #E94233.
DB-1
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.12)
.020
(0.5)
.205 (5.2)
.195 (5.0)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.155 (3.9)
.060
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
1.0 Amps
IFSM
50 Amps
TJ,TSTG
-65 to + 150
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
SYMBOL
VF
IR
DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
1.1 Volts
10.0 uAmps
0.5 mAmps
1998-8






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