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DB1012S PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DB1012S
기능 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
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DB1012S 데이터시트, 핀배열, 회로
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE 1200 Volts CURRENT 1.0 Ampere
DB1012S
FEATURES
* Surge overload rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MECHANICAL DATA:
* Epoxy : UL flammability classification 94V-0
.042 (1.1)
.038 (1.0)
DB-S
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.009
(9.4)
.060 (1.524)
.040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.13)
.205 (5.2)
.195 (5.0)
.135 (3.4)
.115 (2.9)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
TJ,TSTG
DB1012S
1200
840
1200
1.0
50
-55 to + 150
UNITS
Volts
Volts
Volts
Amps
Amps
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
SYMBOL
VF
IR
DB1012S
1.1
5.0
0.5
UNITS
Volts
uAmps
mAmps
1998-8






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부품번호상세설명 및 기능제조사
DB1012S

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

Rectron Semiconductor
Rectron Semiconductor

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