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DCR1260Y65 데이터시트 PDF




Dynex Semiconductor에서 제조한 전자 부품 DCR1260Y65은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 DCR1260Y65 자료 제공

부품번호 DCR1260Y65 기능
기능 Phase Control Thyristor Target Information
제조업체 Dynex Semiconductor
로고 Dynex Semiconductor 로고


DCR1260Y65 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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DCR1260Y65 데이터시트, 핀배열, 회로
DCR1260Y
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Inductance Internal Construction
APPLICATIONS
s High Power Converters
s DC Motor Control
s High Voltage Power Supplies
DCR1260Y
Phase Control Thyristor
Target Information
DS5498-1.2 February 2002
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt
(max)
dI/dt
6500V
1260A
20800A
1000V/µs
300A/µs
VOLTAGE RATINGS
Part and Ordering
Number
DCR1260Y65
DCR1260Y64
DCR1260Y63
DCR1260Y62
DCR1260Y61
DCR1260Y60
Repetitive Peak
Voltages
VDRM and VDRM
V
6500
6400
6300
6200
6100
6000
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1260Y63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: Y
(See Package Details for further information)
Fig. 1 Package outline
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DCR1260Y65 pdf, 반도체, 판매, 대치품
DCR1260Y
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj Virtual junction temperature
Tstg Storage temperature range
Fm Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 50kN
Double side
(with mounting compound) Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.0095 ˚CW
- 0.019 ˚CW
- 0.019 ˚CW
- 0.002 ˚CW
- 0.004 ˚CW
- 135 ˚C
- 125 ˚C
–55 125 ˚C
45.0 55.0 kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VGD
VFGM
V
FGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 4
-
Max.
3.0
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
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DCR1260Y65 전자부품, 판매, 대치품
DCR1260Y
10000
Conditions:
Tj = 125˚C
IT = 900A
VR = 100V
1000
Max
Min
1000
Conditions:
Tj = 125˚C
IT = 900A
VR = 100V
100
Max
Min
IT
QRA3
100
0.1
dI/dt
25% IRR
IRR
1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.6 Stored charge
0.1
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0.1 1
Time - (s)
10 100
Fig.8 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
10
0.1 1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.7 Reverse recovery current
50 2.5
45
40 2.0
35
30 1.5
25
20 1.0
15
10
5
0
1
ITSM (VR = 0)
0.5
ITSM (VR = 50% VRRM)
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
2 3 4 5 6 7 8 9 10
Pulse length, half sine wave - (ms)
Fig.9 Sub-cycle surge currents
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