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부품번호 | DCR1475SY30 기능 |
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기능 | Phase Control Thyristor | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
DCR1475SY
Replaces January 2000 version, DS4246-4.0
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
s Welding
s Battery Chargers
FEATURES
s Double Side Cooling
s High Surge Capability
DCR1475SY
Phase Control Thyristor
Advance Information
DS4246-5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
3000V
2805A
46000A
1000V/µs
300A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
DCR1475SY30
DCR1475SY29
DCR1475SY28
DCR1475SY27
DCR1475SY26
DCR1475SY25
3000
2900
2800
2700
2600
2500
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 250mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1475SY29
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Y
See Package Details for further information.
(The DCR1475 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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DCR1475SY
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ. Max. Units
IRRM/IDRM
dV/dt
dI/dt
VT(TO)
rT
tgd
IL
I
H
tq
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC
-
Rate of rise of on-state current
From 67% V to 1000A
DRM
Gate source 20V, 10Ω
t
r
<
0.5µs.
T
j
=
125˚C
Repetitive, 50Hz
Non-repetitive
-
-
Threshold voltage
At Tvj = 125oC
-
On-state slope resistance
Delay time
Latching current
At Tvj = 125oC
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
Tj = 25oC, VD = 5V
-
-
100
Holding current
T
j
=
25oC,
R
g-k
=∞
30
Turn-off time
I
T
=
800A,
tp
=
1ms,
Tj
=
125˚C,
VRM = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
400
250 mA
1000 V/µs
150 A/µs
300 A/µs
0.885 V
0.191 mΩ
2.0 µs
300 mA
100 mA
- µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
VFGM
V
FGN
VRGM
IFGM
PGM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
Max. Units
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
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4페이지 60
Surge current values with
VR = 50% VRRM 1/4 sinewave.
For VR = 0, multiply by 1.25
For VR = 100% VRRM 1/2 sinewave,
multiply by 0.85
50 7
40
30 I2t
6
5
20 4
10 3
1 10 1 2 3 5 10 20 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 125˚C)
DCR1475SY
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7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
DCR1475SY30 | Phase Control Thyristor | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |