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부품번호 | DCR1476SY37 기능 |
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기능 | Phase Control Thyristor | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
DCR1476SY
Replaces January 2000 version, DS4647-5.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR1476SY
Phase Control Thyristor
Advance Information
DS4647-6.0 July 2001
KEY PARAMETERS
V
DRM
IT(AV)
ITSM
dVdt
3800V
2223A
36250A
1000V/µs
dI/dt 300A/µs
VOLTAGE RATINGS
Type Number
DCR1476SY38
DCR1476SY37
DCR1476SY36
DCR1476SY35
DCR1476SY34
Repetitive Peak
Voltages
VDRM VRRM
V
3800
3700
3600
3500
3400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 250mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1476SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Y
See Package Details for further information.
(The DCR1476 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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DCR1476SY
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
dV/dt
dI/dt
VT(TO)
rT
tgd
t
q
I
L
I
H
Parameter
Conditions
Typ.
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.
-
Rate of rise of on-state current
From 67% VDRM to 1000A
Gate source 20V, 10Ω
tr ≤ 0.5µs, Tj = 125oC
Repetitive 50Hz
Non-repetitive
-
-
Threshold voltage
At Tvj = 125oC
-
On-state slope resistance
Delay time
Turn-off time
At Tvj = 125oC
VD = 67% VDRM, Gate source 30V, 15Ω
tr = 0.5µs, Tj = 25oC
IT = 1000A, tp = 1ms, Tj = 125˚C,
V
R
=
50V,
dI /dt
RR
=
2A/µs,
V
DR
=
67%
V,
DRM
dV /dt
DR
=
8V/µs
linear
-
-
600
Latching current
T = 25oC, V = 5V
jD
300
Holding current
T
j
=
25oC,
R
g-k
=
∞
-
Max. Units
250 mA
1000 V/µs
150 A/µs
300 A/µs
1.03 V
0.32 mΩ
2.5 µs
800 µs
1000 mA
500 mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
V
GD
V
FGM
VFGN
V
RGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
Max. Units
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
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4페이지 DCR1476SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode tab
Cathode
Ø112.5 max
Ø73 nom
Ø1.5
Gate
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 43kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
(The DCR1476 is also available in a thin package, type code V. Please contact Customer Services for more information).
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7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ DCR1476SY37.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DCR1476SY34 | Phase Control Thyristor | Dynex Semiconductor |
DCR1476SY35 | Phase Control Thyristor | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |