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부품번호 | DCR1576SY48 기능 |
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기능 | Phase Control Thyristor | ||
제조업체 | Dynex Semiconductor | ||
로고 | |||
DCR1576SY
Replaces January 2000 version, DS4355-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR1576SY
Phase Control Thyristor
Advance Information
DS4355-5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
5200V
2162A
40000A
1000V/µs
300A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VV
DRM RRM
V
DCR1576SY52
DCR1576SY50
DCR1576SY48
DCR1576SY46
DCR1576SY44
DCR1576SY42
5200
5000
4800
4600
4400
4200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1575SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Y
See Package Details for further information.
(The DCR1576 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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DCR1576SY
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ. Max. Units
I /I
RRM DRM
dV/dt
dI/dt
VT(TO)
r
T
tgd
IL
IH
t
q
Peak reverse and off-state current
At V /V , T = 125oC
RRM DRM case
-
Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.
-
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Gate source 20V, 20Ω
tr < 0.5µs.
Repetitive 50Hz
Non-repetitive
-
-
Threshold voltage
At Tvj = 125oC
-
On-state slope resistance
Delay time
Latching current
At T = 125oC
vj
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
Tj = 25oC, VD = 5V
-
-
550
Holding current
Tj = 25oC, Rg - k = ∞
150
Turn-off time
IT = 800A, tp = 1ms, Tj = 125˚C,
VRM = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
1.0
300 mA
1000 V/µs
150 A/µs
300 A/µs
1.05 V
0.34 mΩ
2.5 µs
1000 mA
300 mA
- ms
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
IGT
VGD
VFGM
V
FGN
VRGM
IFGM
PGM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, fig.4
Max. Units
3.0 V
300 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
4/9
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4페이지 100 6.0
75 5.0
50
I2t
25
4.0
3.0
0 2.0
1
10 1
5 10
50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
DCR1576SY
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7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ DCR1576SY48.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DCR1576SY42 | Phase Control Thyristor | Dynex Semiconductor |
DCR1576SY44 | Phase Control Thyristor | Dynex Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |