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DD28F032SA-080 데이터시트 PDF




Intel Corporation에서 제조한 전자 부품 DD28F032SA-080은 전자 산업 및 응용 분야에서
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부품번호 DD28F032SA-080 기능
기능 32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
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DD28F032SA-080 데이터시트, 핀배열, 회로
E
DD28F032SA
32-MBIT (2 MBIT X 16, 4 MBIT X 8)
FlashFile™ MEMORY
n User-Selectable 3.3V or 5V VCC
n User-Configurable x8 or x16 Operation
n 70 ns Maximum Access Time
n 28.6 MB/sec Burst Write Transfer Rate
n 1 Million Typical Erase Cycles per Block
n 56-Lead, 1.2 x 14 x 20 mm Advanced
Dual Die TSOP Package Technology
n 64 Independently Lockable Blocks
n Revolutionary Architecture
100% Backwards-Compatible with
Intel 28F016SA
Pipelined Command Execution
Program during Erase
n 2 mA Typical ICC in Static Mode
n 2 µA Typical Deep Power-Down
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s DD28F032SA 32-Mbit FlashFile™ memory is a revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and communication products. With innovative
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal
choice for designing embedded mass storage flash memory systems.
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA
die in a single Dual Die Thin Small Outline Package (DDTSOP).
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA
16-Mbit FlashFile memory), very high-cycling, low-power 3.3V operation, very fast program and read
performance and selective block locking provide a highly flexible memory component suitable for high-density
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA’s dual read voltage
enables the design of memory cards which can be read/written in 3.3V and 5.0V systems interchangeably. Its
x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option
enables bundling of executable application software in a Resident Flash Array or memory card. The
DD28F032SA will be manufactured on Intel’s 0.6 µm ETOX IV technology.
December 1996
Order Number: 290490-005




DD28F032SA-080 pdf, 반도체, 판매, 대치품
DD28F032SA
E
Number
-001
-002
-003
-004
-005
REVISION HISTORY
Description
—Original Version
—Never Published
—Full Datasheet with Specifications
—CE0#, CE1# control 28F016SA No. 1
—CE0#, CE2# control 28F016SA No. 2
—DC Characteristics (3.3V VCC): ICCR1 (TTL): BYTE# = VIL or VIH
—Full Chip Erase Time (3.3V VCC) = 51.2 sec typ
—Full Chip Erase Time (5.0V VCC) = 38.4 sec typ
—Section 6.7: Added specifications tPHEL3, tPHEL5
—TSOP dimension A1 = 0.05 mm (min)
—Revised Product Status to Preliminary
—tWHGL (3.3V) = 120 ns
—Minor cosmetic changes
—Updated AC/DC parameters
4

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DD28F032SA-080 전자부품, 판매, 대치품
E
DQ
8-15
DQ
0-7
DD28F032SA
Output
Buffer
Input
Buffer
Address
Queue
Latches
Y
Decoder
X
Decoder
Address
Counter
Output
Buffer
ID
Register
CSR
Input
Buffer
Data
Queue
Registers
Input
Buffer
I/O Logic
3/5#
BYTE#
Page
Buffers
ESRs
Data
Comparator
Y Gating/Sensing
CE0#
CE1#
OE#
WE#
WP#
RP#
RY/BY#
Program/Erase
Voltage Switch
VPP
3/5#
VCC
GND
0490_01
Figure 1. Block Diagram of 16-Mbit Devices in DD28F032SA
Architectural Evolution Includes Page Buffers, Queue Registers and Extended Registers
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
DD28F032SA-080

32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY

Intel Corporation
Intel Corporation

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