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PDF CZRA3018 Data sheet ( Hoja de datos )
| Número de pieza | CZRA3018 | |
| Descripción | Surface Mount Zener Diode | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CZRA3018 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRA3011 Thru CZRA3100
Voltage: 11 - 100 Volts
Power: 3.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical ID less than 1uA above 11V
- High temperature soldering 260°C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
Mechanical data
- Case: JEDEC DO-214AC, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MIL-
STD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
DO-214AC (SMA)
0.067(1.70)
0.051(1.29)
0.180(4.57)
0.160(4.06)
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.110(2.79)
0.086(2.18)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
Symbol
PD
IFSM
TJ,TSTG
Value
3
24
15
-55 to +150
Units
Watts
mW/°C
Amps
°C
MDS0211015A
Page 1
1 page  
Surface Mount Zener Diode
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA
θLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for θLA will
vary and depends on the device mounting method.
θLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + ∆TJL
COMCHIP
www.comchip.com.tw
∆TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
∆TJL = θLAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (∆TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
∆V = θVZ ∆TJ
θVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
MDS0211015A
Page 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CZRA3018.PDF ] | |
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