(PDF) CZT5338 Datasheet - NPN SILICON POWER TRANSISTOR

Número de pieza	CZT5338
Descripción	NPN SILICON POWER TRANSISTOR
Fabricantes	Central Semiconductor Corp
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No Preview Available ! CZT5338 NPN SILICON POWER TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: POWER TM 223 The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ,Tstg ΘJA 100 100 6.0 5.0 1.0 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) UNITS V V V A A W oC oC/W SYMBOL ICBO IEBO ICEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VBE=6.0V VCE=90V IC=50mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A MIN MAX UNITS 10 µA 100 µA 100 µA 100 V 0.7 V 1.2 V 1.2 V 1.8 V 30 30 120 20 312 1 page

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