PDF CXA3238TN Data sheet ( Hoja de datos )

Número de pieza	CXA3238TN
Descripción	6/4-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive
Fabricantes	Sony Corporation
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No Preview Available ! CXA3238TN/CXA3239TN 6/4-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive For the availability of this product, please contact the sales office. Description The CXA3238TN/CXA3239TN is a Read/Write 38 pin TSSOP (Plastic) amplifier for GMR-Ind (Giant Magneto Resistive- Inductive) heads used in hard disk drives, and is capable of supporting up to six channels. Features • +5 V and –3 V power supply. • Current bias voltage sense type. • Drives up to six heads (CXA3238TN) • Drives up to four heads (CXA3239TN) • Low power 180 mW at Read • Differential read amplifier gain ; ×140/190 (RMR=50 Ω) • Input noise of 0.77 nV/ √ Hz (typ.), RMR=50 Ω, IB=6.0 mA. • Recovery time write to read ; 300 nsec. (typ.) • Write data is triggered by differential P-ECL signal. • Servo bank write. (All channels) • Write unsafe detection circuit. • Serial port … Head selection MR bias Write current Applications Hard disk drives with GMR-Ind heads. Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VCC –0.3 to +6 V • Supply voltage VEE –4.5 to +0.3 V • Digital input voltage Vdi –0.3 to VCC+0.3 V • Operating temperature Topr –20 to +70 °C • Storage temperature Tstg –55 to +150 °C • Allowable power dissipation TSSOP38 PD 1000 mW Operating Conditions • Supply voltage • MR bias voltage • Bias current • Write current VCC +4.4 to +5.5 V VEE –4.0 to –2.6 V VMR –300 to +300 mV IB 3 to 8 mA IW 15 to 45 mA Structure Bipolar silicon monolithic IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E98346C8Y 1 page CXA3238TN/CXA3239TN Pin Symbol No. 10 FLT/SE/BHV Equivalent circuit Description 100 10k 10 VEE VCC Head unsafe detection output. Servo Bank Write Enable input. Buffered Head Voltage output. GND 11 R/XW 100k 11 VEE VCC 3Vf GND Read / Write control signal input. Read when high, Write when low. 13 CAP VCC 13 Connect an external capacitor of Read amplifier between this pin and VEE. 14 VEE 15 W0X 16 W0Y 19 W1X 20 W1Y 26 W2X 25 W2Y 27 W3X 28 W3Y 34 W4X 33 W4Y 35 W5X 36 W5Y VEE –3 V power supply. 15 19 26 27 34 35 16 20 25 28 33 36 VEE VCC Inductive heads for Write. Six channels are provided. GND —5— 5 Page CXA3238TN/CXA3239TN No. Item Bank Write Enable 4-1 voltage Bank Write Enable 4-2 current 5-1 FLT output low voltage Symbol VSEH Measurement conditions ISEH VFLTL External resistance=2.4 kΩ 5-2 FLT output high voltage VFLTH External resistance=2.4 kΩ 6 BHV gain accuracy Read Characteristics R1 Low Gain R2 High Gain Low frequency cut-off R3 (–3 dB) High frequency cut-off R4 (–3 dB) R5 Input reflected noise VBHV=VCC–4×IB×(RMR+5.5 Ω) EBHV IB=“1,1,1” RMR=50 Ω RMR=50 Ω, IB=6.0 mA [GAIN]=0 AVL RMR=50 Ω, IB=6.0 mA [GAIN]=1 AVH RMR=50 Ω, IB=6.0 mA FCL FCH Exclusive of Head noise ENI RMR=50 Ω, IB=6.0 mA R6 MR bias current range 1 IBR1 R7 MR bias accuracy EIB R8 MR bias resolution RIB 3 bit DAC VCC power supply R9-1 rejection ratio Ripple voltage : 100 mVp-p PSRR1 100 kHz to 50 MHz VEE power supply R9-2 rejection ratio Ripple voltage : 100 mVp-p PSRR2 100 kHz to 10 MHz Common mode R10-1 rejection ratio 1 Ripple voltage : 100 mVp-p CMRR1 100 kHz to 50 MHz Common mode R10-2 rejection ratio 2 Ripple voltage : 100 mVp-p CMRR2 51 MHz to 80 MHz Control line input noise R11 rejection Ripple voltage : 100 mVp-p CLRR 4 MHz to 80 MHz RDX/RDY offset difference R12 VOFF1 Write to Read magnitude RDX/RDY output R13 impedance RDro Differential, read mode Min. VCC +1.2 Typ. Max. VCC +1.4 Unit V 6 14 mA 0.8 V 4.5 V –8 8 % 115 140 165 V/V 155 190 225 V/V 350 550 kHz 140 200 MHz 0.77 0.95 nV/ √ Hz 3 8 mA –7 +7 % 0.714 mA 38 dB 45 dB 37 dB 27 dB 40 dB 50 mV 30 100 Ω —11— 11 Page

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