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PDF CXA3541N Data sheet ( Hoja de datos )
| Número de pieza | CXA3541N | |
| Descripción | 2-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive | |
| Fabricantes | Sony Corporation | |
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CXA3541N
2-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive
Description
The CXA3541N is a read/write amplifier for GMR-Ind
(Giant Magneto Resistive-Inductive) heads used in
hard disk drives, and is capable of supporting up to
two channels.
24 pin SSOP (Plastic)
Features
• +5V and –3V power supply
• Current bias voltage sense type
• Low power 180mW at read
• Differential read amplifier gain; ×100/135 (RMR = 50Ω)
• Input noise of 0.77nV/√ Hz (typ.), RMR = 50Ω,
IB = 5.9mA
• Recovery time write to read; 300ns (typ.)
• Write data is triggered by differential P-ECL signal
• Servo bank write
• Write unsafe detection circuit
• Serial port
Head selection
MR bias
Write current
Applications
Hard disk drives with GMR-Ind heads
Structure
Bipolar silicon monolithic IC
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage
VCC –0.3 to +5.8 V
• Supply voltage
VEE –3.7 to +0.3 V
• Digital input voltage Vdi –0.3 to VCC + 0.3 V
• Operating temperature Topr
0 to +70 °C
• Storage temperature Tstg –55 to +150 °C
• Allowable power dissipation
PD 800 mW
(on board)
Operating Conditions
• Supply voltage
• MR bias voltage
• Bias current
• Write current
VCC
VEE
VMR
IB
IW
4.4 to 5.5 V
–3.5 to –2.6 V
–300 to +300 mV
3 to 8 mA
19.5 to 49.5 mA
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E00205-PS
1 page  
Pin
No.
Symbol
Equivalent circuit
VCC
CXA3541N
Description
24 RS
250
24
VEE
Bias current setting register is connected
between this pin and GND.
VBGR
= 1.3V
GND
–5–
5 Page 
CXA3541N
Unsafe Condition
1. Write fault condition
FLT is a high level in write fault condition.
• Open write head leads. fWD < 15MHz
• Write head leads shorted to ground.
• WD frequency is too low.
• Power supply is out of tolerance.
2. Read fault condition
FLT is a low level in read fault condition.
• Open short MR head. (This function is set by serial resister.)
Bank Write Control (Refer to Bank "Write current vs. Current accuracy" characteristic curve)
1. Set the read mode.
2. Force a certain voltage (min. VCC + 1.2V) to FLT/SE pin by using the pull-up register. (RSE = 820Ω)
#This operation disables all fault detection.
3. Set VCC at 3.5V (in case of the erase mode only)
4. Start the write operation by setting R/XW = L.
5. Terminate the write operation by setting R/XW = H.
i) Allow 50% write duty or less.
ii) Low voltage detector is disabled in the bank write mode and erase mode.
iii) Don't change the serial register data bits in following conditions:
• VCC = 3.5V
• On entering write data.
BHV (Buffered Head Voltage)
1. Applicable within VCC = 5V ± 5%.
2. Turn BHV on, but turn off MROPN and MRSHT.
3. VBHV is determined by basis of VCC. VBHV = VCC – (4 × IB × (RMR + 5.5Ω))
Head Condition
1. Short X-Y terminal on un-used write head.
2. Recommended X-Y terminal on un-used read head short.
Polarity
1. Read output signal on RDX is negative, when MRX is positive by increasing RMR.
2. Write current flows into X side, when WDX is high and WDY is low.
Head Select Table
(2ch)
HS Normal operation
00
11
– 11 –
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet CXA3541N.PDF ] | |
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