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PDF 2SD662B Data sheet ( Hoja de datos )
| Número de pieza | 2SD662B | |
| Descripción | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
s Features
q High collector to emitter voltage VCEO.
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD662
base voltage 2SD662B
Collector to 2SD662
emitter voltage 2SD662B
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
250
400
200
400
5
100
70
600
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter 2SD662
voltage
2SD662B
ICEO
VCEO
VCE = 100V, IB = 0
IC = 100µA, IB = 0
2 µA
200
V
400
Emitter to base voltage
Forward current
2SD662
transfer ratio
2SD662B
VEBO
hFE*
IE = 10µA, IC = 0
VCE = 10V, IC = 5mA
5V
30 220
30 150
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
50
1.2 V
80 MHz
5 10 pF
*hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD662B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD662 | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) | Panasonic Semiconductor |
| 2SD662 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
| 2SD662B | Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) | Panasonic Semiconductor |
| 2SD662B | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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