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PDF 2SD958 Data sheet ( Hoja de datos )
| Número de pieza | 2SD958 | |
| Descripción | Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB788
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
120
120
7
50
20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = 50V, IE = 0
100 nA
VCE = 50V, IB = 0
1 µA
IC = 10µA, IE = 0
120
V
IC = 1mA, IB = 0
120
V
IE = 10µA, IC = 0
7
V
VCE = 5V, IC = 2mA
180 700
IC = 20mA, IB = 2mA
0.6 V
VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
VCE = 40V, IC = 2mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD958.PDF ] | |
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