Datasheet.kr   

2SJ105 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 2SJ105은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 2SJ105 자료 제공

부품번호 2SJ105 기능
기능 Silicon P Channel Junction Type Field Effect Transistor
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


2SJ105 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 4 페이지수

미리보기를 사용할 수 없습니다

2SJ105 데이터시트, 핀배열, 회로
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ105
Unit: mm
· High breakdown voltage: VGDS = 50 V
· High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
· Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
· Complimentary to 2SK330
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
50
-10
200
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = 30 V, VDS = 0
VDS = 0, IG = 100 mA
IDSS
(Note)
VDS = -10 V, VGS = 0
VGS (OFF) VDS = -10 V, ID = -0.1 mA
ïYfsï
VDS = -10 V, VGS = 0, f = 1 kHz
RDS (ON)
Ciss
Crss
VDS = -10 mV, VGS = 0
IDSS = -5 mA
VDS = -10 V, VGS = 0, f = 1 MHz
VDG = -10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA
Min Typ. Max Unit
¾ ¾ 1.0 nA
50 ¾ ¾
V
-1.2 ¾ -14 mA
0.3 ¾ 6.0 V
1.0 4.0 ¾ mS
¾ 270 ¾
W
¾ 18 ¾ pF
¾ 3.6 ¾ pF
1 2003-03-25




2SJ105 pdf, 반도체, 판매, 대치품
2SJ105
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
4 2003-03-25

4페이지












구       성 총 4 페이지수
다운로드[ 2SJ105.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
2SJ103

P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
2SJ104

Silicon P Channel Junction Type Field Effect Transistor

Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵