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부품번호 | 2SJ107 기능 |
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기능 | Silicon P Channel Junction Type Field Effect Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ107
Unit: mm
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Low RDS (ON): RDS (ON) = 40 Ω (typ.)
• Small package
• Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
25
−10
200
125
−55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
⎯ ⎯ 1.0 nA
V (BR) GDS VDS = 0, IG = 100 μA
25 ⎯ ⎯
V
IDSS
(Note 1)
VDS = −10 V, VGS = 0
−2.6 ⎯ −20 mA
VGS (OFF) VDS = −10 V, ID = −0.1 μA
0.2 ⎯ 2.0 V
⎪Yfs⎪
VDS = −10 V, VGS = 0, f = 1 kHz
(Note 2)
12
30
⎯
mS
Ciss VDS = −10 V, VGS = 0, f = 1 MHz
⎯ 105 ⎯
pF
Crss
VGD = 10 V, ID = 0, f = 1 MHz
⎯ 32 ⎯ pF
RDS (ON) VDS = −10 mV, VGS = 0
(Note 2) ⎯ 40 ⎯
Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value IDSS = −5 mA
1 2007-11-01
2SJ107
4 2007-11-01
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2SJ103 | P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) | Toshiba Semiconductor |
2SJ104 | Silicon P Channel Junction Type Field Effect Transistor | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |