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PDF 2SJ163 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ163 | |
| Descripción | Silicon P-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SJ163
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VGDS
ID
IG
PD
Tch
Tstg
65
−20
−10
150
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 4M
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = −10V, VGS = 0
− 0.2
−6 mA
Gate to Source leakage current IGSS
VGS = 30V, VDS = 0
10 nA
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
65
V
Gate to Source cut-off voltage VGSC
VDS = −10V, ID = −10µA
1.5 3.5
V
Forward transfer admittance
| Yfs |
VDS = −10V, ID = −1mA, f = 1kHz
1.8
2.5
mS
Drain to Source ON-resistance RDS(on) VDS = −10mV, VGS = 0
300 Ω
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = −10V, VGS = 0, f = 1MHz
12 pF
4 pF
* IDSS rank classification
Runk
O
P
IDSS (mA) − 0.2 to −1 − 0.6 to −1.5
Marking Symbol 4MO
4MP
Q
−1 to −3
4MQ
R
−2.5 to −6
4MR
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SJ163.PDF ] | |
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