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PDF 2SJ247 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ247 | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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2SJ247
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
1 page  
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20 di/dt = 50 A/ µs
VGS = 0
10
0.5
–0.2 –0.5 –1 –2
–5 –10 –20
Reverse Drain Current I DR (A)
2SJ247
10000
Typical Capacitance
vs. Drain-Source Voltage
3000
1000
VGS= 0, f = 1 MHz
Ciss
300 Coss
100
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–20 –50 V
–4
–40
VDS
–50 V
–25 V
VDD = –10 V
–8
–60
ID = –8 A
–80
–12
VGS
–16
–100
0
10 20 30 40
Gate Charge Qg (nc)
–20
50
Switching Characteristics
500
VGS = –10 V, VDD =:. –30 V
Pw = 2 µs, duty ≤ 1%
200
t d (off)
100
50 tf
20 tr
10 t d (on)
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ247.PDF ] | |
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