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PDF 2SJ312 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ312 | |
| Descripción | Silicon P Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 8.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
Rating
−60
−60
±20
−14
−56
40
150
−55~150
Unit
V
V
V
A
W
°C
°C
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
3.125
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-06-27
1 page  
2SJ312
5 2002-06-27
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ312.PDF ] | |
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