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PDF 2SJ317 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ317 | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ317 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2SJ317
Silicon P-Channel MOS FET
Application
High speed power switching
Low voltage operation
Features
• Very low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
1 page  
2000
1000
500
Reverse Recovery Time vs.
Reverse Drain Current
200
100
50 di/dt = 10 A/µs
VGS = 0
20
–0.1 –0.2 –0.5 –1.0 –2 –5 –10
Reverse Drain Current I DR (A)
2SJ317
Switching Time vs. Drain Current
2000
1000
tf
td(off)
500 tr
200
VGS
VDD
= –4 V
.=. –10 V
PW = 5 µs
Duty cycle <= 1 %
100
td(on)
50
–0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current I D (A)
–5
Dynamic Input Characteristics
–25
V DD = –10 V
I D = –2 A
–20 Pulse test
VGS
–15
–10
–8
–6
–10 –4
–5 –2
VDS
0
0 2 4 6 8 10
Gate Charge Qg (nc)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Coss
VGS = 0
f = 1 MHz
Ciss
20 Crss
10
–0.1 –0.2 –0.5 –1.0 –2
–5 –10
Drain to Source Voltage V DS (V)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ317.PDF ] | |
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