(PDF) 2SJ319S Datasheet - Silicon P-Channel MOS FET

Número de pieza	2SJ319S
Descripción	Silicon P-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S 1 page Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 di/dt = 50 A/µs, VGS = 0 10 duty < 1 %, Ta = 25 °C 5 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 Reverse Drain Current I DR (A) 2SJ319(L), 2SJ319(S) 1000 Typical Capacitance vs. Drain to Source Voltage 500 Ciss 200 100 Coss 50 VGS = 0 20 f = 1 MHz 10 Crss 5 0 –10 –20 –30 -40 –50 Drain to Source Voltage V DS (V) 0 –100 Dynamic Input Characteristics VDD = –50 V –100 V –150 V V DS –200 –300 V DD = –150 V –100 V –50 V 0 –4 –8 –12 –400 V GS –16 –500 0 4 8 12 16 Gate Charge Qg (nc) –20 20 Switching Characteristics 500 V GS = –10 V, V DD = –30 V duty < 1 %, PW = 2 µs 200 100 t d(off) 50 tf 20 t r t d(on) 10 5 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Drain Current I D (A) 5 5 Page

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PDF 2SJ319S Data sheet ( Hoja de datos )