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2SJ343 PDF 데이터시트 ( Data , Function )
| 부품번호 | 2SJ343 기능 |
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| 기능 | Silicon P Channel MOS Type Field Effect Transistor | ||
| 제조업체 | Toshiba Semiconductor | ||
| 로고 |  |
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ343
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: Vth = −0.8~−2.5 V
• High speed
• Enhancement-mode
• Small package
• Complementary to 2SK1826
Marking
Equivalent Circuit
2SJ343
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
−50
−7
−50
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
IGSS
V (BR) DSS
IDSS
Vth
⎪Yfs⎪
RDS (ON)
Ciss
Crss
Coss
ton
toff
Test Condition
VGS = −7 V, VDS = 0
ID = −100 μA, VGS = 0
VDS = −50 V, VGS = 0
VDS = −5 V, ID = −0.1 mA
VDS = −5 V, ID = −10 mA
ID = −10 mA, VGS = −4 V
VDS = −5 V, VGS = 0, f = 1 MHz
VDS = −5 V, VGS = 0, f = 1 MHz
VDS = −5 V, VGS = 0, f = 1 MHz
VDD = −5 V, ID = −10 mA,
VGS = 0~−4 V
Min Typ. Max Unit
⎯ ⎯ −1 μA
−50 ⎯
⎯
V
⎯ ⎯ −1 μA
−0.8 ⎯ −2.5 V
15 ⎯ ⎯ mS
⎯ 20 50 Ω
⎯ 10.5 ⎯
pF
⎯ 1.9 ⎯ pF
⎯ 7.2 ⎯ pF
⎯ 0.15 ⎯
⎯ 0.13 ⎯
μs
1 2007-11-01
 
2SJ343
4 2007-11-01
4페이지 | |||
| 구 성 | 총 5 페이지 | ||
| 다운로드 | [ 2SJ343.PDF 데이터시트 ] | 구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- 전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 ) 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
관련 데이터시트
| 부품번호 | 상세설명 및 기능 | 제조사 |
| 2SJ340 | Ultrahigh-Speed Switching Applications |  Sanyo Semicon Device |
| 2SJ342 | Silicon P Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
| DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |