|
|
PDF 2SJ347 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ347 | |
| Descripción | Silicon P Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SJ347 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ347
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: Vth = −0.5~−1.5 V
• High speed
• Small package
• Complementary to 2SK1830
Marking
Equivalent Circuit
2SJ347
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
−20
−7
−50
100
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gateate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
IGSS
V (BR) DSS
IDSS
Vth
⎪Yfs⎪
RDS (ON)
Ciss
Crss
Coss
ton
toff
Test Condition
VGS = −7 V, VDS = 0
ID = −100 μA, VGS = 0
VDS = −20 V, VGS = 0
VDS = −3 V, ID = −0.1 mA
VDS = −3 V, ID = −10 mA
ID = −10 mA, VGS = −2.5 V
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
Min Typ. Max Unit
⎯ ⎯ −1
−20 ⎯
⎯
⎯ ⎯ −1
−0.5 ⎯ −1.5
15 ⎯ ⎯
⎯ 20 40
⎯ 10.4 ⎯
⎯ 2.8 ⎯
⎯ 8.4 ⎯
μA
V
μA
V
mS
Ω
pF
pF
pF
⎯ 0.15 ⎯
⎯ 0.13 ⎯
μs
1 2007-11-01
1 page  
2SJ347
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5 2007-11-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SJ347.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SJ340 | Ultrahigh-Speed Switching Applications |  Sanyo Semicon Device |
| 2SJ342 | Silicon P Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
| 2SJ343 | Silicon P Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
| 2SJ344 | P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANAROG SWITCH APPLICATIOS) | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |