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PDF 2SJ557 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ557 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16+–00..016
3
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
12
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
Gate to Source Voltage
VGSS
–20 / +5
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±2.5
±10
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 1.25
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XB
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13292EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1998, 1999
1 page  
2SJ557
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
0.1
DYNAMIC INPUT CHARACTERISTICS
−10
ID = −2.5 A
−8
−6 VDD = −10 V
−6 V
−4
−2
0.01
0.4
0.6 0.8
1.0 1.2
VF(S-D) - Source to Drain Voltage - V
0
0 12
34
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without Board
5
100
Mounted on 250 mm2 x 35µ m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board
10
1
0.001
0.01
0.1 1 10
PW - Pulse Width - S
100 1000
Data Sheet D13292EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ557.PDF ] | |
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